HOMECOMPANY NEWSLet's explore common application technologies for semiconductor processing equipment.

Let's explore common application technologies for semiconductor processing equipment.

2025-07-15浏览量:1

Semiconductor Technology

Common Silicon Wafer Production Processes

Silicon is found all over the earth, usually showing up as silicates or silicon dioxide in things like sand and certain types of rock

Transforming raw silicon into a usable wafer isn't exactly simple—it's a journey that usually passes through three big stages. First, the silicon has to be extracted and made much purer. After that comes the growth of single crystal silicon, which is a painstaking process on its own. Soon after, these crystals are sliced and prepared into wafers

It might sound surprising, but making a silicon wafer uses a range of different machines. There’s the single crystal furnace, an oxidation furnace, chemical vapor epitaxy equipment, magnetron sputtering systems, chemical mechanical polishers, photolithography machines, ion implanters, wafer dicing units, thinning tools, and more. Among these, the photolithography tool is only one link in a pretty long chain

Specialty gases show up everywhere along the way. They're considered vital raw materials in this field. From start to finish, nearly all major steps rely on them. They are often called the "lifeblood" of production for a reason. The tools used in these plants need their gases supplied both steadily and reliably. Without the right setup, issues soon follow

Silicon Wafer

Common Equipment Used in the Semiconductor Industry

Single Crystal Furnace

A single crystal furnace is usually set up with an atmosphere of inert gases, like nitrogen or helium. It uses a graphite heater to melt polycrystalline silicon, setting the stage for some very precise work. Thanks to a technique called the Czochralski process, the furnace can produce single crystal silicon that’s just about as close to flawless as it gets. Keeping the temperature correct is key here, and every batch can feel slightly different to handle

As the crystal grows, its diameter can depend on a few variables: temperature, how quickly it’s being pulled up, the rotation speed, how fast the crucible is moving, and the flow of protective gas. Most of the time, temperature determines if the crystal actually forms as it should. The way the silicon is moved is also critical, and it can absolutely change the way the finished material turns out. You only really know how things went once you get to examine the crystal later on. The crucial points to track include the diameter, the applied silicon power, how much leaks out during the process, and the purity of the argon gas used

Single Crystal Furnace

Chemical Vapor Epitaxy Furnace

The chemical vapor epitaxy (CVE) furnace steps in when it's time to build up a thin, crystalline layer on a base of single crystal silicon. What’s neat is that this new layer mimics the orientation of the base material, basically growing as an extension of it. If the end goal is a device capable of handling high voltages and heavy currents, you need the right mix: a slim, high-resistance layer laid on top of a more conductive base. This helps cut down on unwanted resistance while making sure the device won’t break under stress

Here, the CVE furnace prepares a single crystal wafer for the next stage of its life. Epitaxial growth is a special type of chemical vapor deposition where the new thin layer doesn't just stick to the base—it actually continues the base’s own crystal structure, creating a direct match

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